* Shielded Gate MOSFET Technology
* DUAL COOL® Top Side Cooling DFN8 Package
* Max rDS(on) = 17 mW at VGS = 10 V, ID = 9.3 A
* Max rDS(on) = 25 mW at VGS .

* Primary MOSFET in DC − DC Converters
* Secondary Synchronous Rectifier
* Load Switch MOSFET MAXIMUM RATIN.

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaini.

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